Silicon Carbide Power Modules
Leading Chip and Packaging Technology for Maximum Energy Efficiency
SiC Modules – 10kW to 350kW
Semikron Danfoss Silicon Carbide power modules combine industry standard housings, sophisticated packaging technologies, and the latest SiC chips.
Silicon Carbide Power Modules Benefits
Semikron Danfoss´s hybrid SiC and SiC MOSFET power modules combine the benefits of proven industry standard power modules with Semikron Danfoss packaging technologies. Thanks to various packaging optimizations, all the benefits that silicon carbide offers can be fully exploited.
A low module commutation inductance allows for full speed switching of SiC MOSFETs. The higher switching speeds can be converted into higher switching frequencies, resulting in smaller magnetic filter components. At the same time, the switching losses can be reduced, increasing system efficiency. Sophisticated materials and packaging technologies minimize the thermal resistance of the chip to the heatsink, enabling higher power densities.
Silicon Carbide Power Modules Key Features
- Latest SiC chips from leading suppliers
- Higher switching frequencies allow for smaller filter components
- Reduced power losses boost efficiency and lower the system costs and size thanks to more compact cooling devices
- Standard industry packages, optimized to the requirements of SiC: low inductance, low thermal resistance
- Optimized chipsets for your application
Silicon Carbide Power Modules Applications
- Solar inverters: highest efficiency in booster and inverter applications using 3-level topologies
- Energy storage systems: maximum efficiency and low audible noise in 2- and 3-level topologies
- UPS: high efficiency double conversion systems
- Motor drives: active front end and motor inverter with sixpacks and half-bridges
- Power supplies: auxiliary supplies for traction applications, induction heating, welding and cutting, etc.
Leading Chip and Packaging Technology for Maximum Energy Efficiency
Hybrid SiC Modules: 50% Lower Power Losses and Easy Implementation
- Combination of IGBT switches and silicon carbide Schottky free-wheeling diodes
- Virtually no diode switching losses and significantly reduced IGBT turn-on losses
- Combination of high-speed IGBT and SiC Schottky diode result in 50% lower switching losses
- Easy implementation of cost optimized SiC solution:
no major driver or system design change required; small SiC chip area limits additional expense;higher efficiency, higher switching frequency
References: Solar inverters, energy storage systems, high power car charging stations, high efficiency and high-speed motor drives
SiC MOSFET Modules: Unmatched Efficiency and Performance
- Excellent efficiency at maximum switching frequency.
- Latest silicon carbide MOSFET technology
- Optimized chipsets to meet customer requirements
- With and without SiC Schottky free-wheeling diode
References: Solar inverters, traction auxiliary power supplies, sports and racing cars
Semikron Danfoss Packaging Technologies and Leading Chip Suppliers
- Optimized power modules with minimum inductance to facilitate fast switching
- Minimum thermal resistance thanks to the use of sophisticated packaging technologies
- Application specific chipsets that are perfectly aligned with customer requirements
- Wide power range from 10kW to 350kW in SiC MOSFET and hybrid SiC modules
- Full range of industry standard packages
- SiC Schottky diodes and MOSFETs from leading chip suppliers
Silicon Carbide Power Modules Product Range
Our products cover a power range from 10kW to 350kW with blocking voltages of 1200V and 1700V. MiniSKiiP and SEMITOP represent the low power range of up to 25kW. SEMITOP Classic modules help achieve maximum flexibility in combination with the industry standard SEMITOP E1/E2.
The medium and high-power range is covered by the SEMITRANS 3, SKiM 63/93, and SEMiX 3p packages. These are available in SiC hybrid and SiC MOSFET topologies for up to 600A nominal chip current. Fast rectifier modules with SiC Schottky diodes are also available in SEMIPACK and SEMITOP.
SiC MOSFET Modules
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Hybrid SiC Modules
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SEMITOP E1/E2 SiC MOSFET Platform
The SEMITOP E1/E2 SiC MOSFET platform delivers the latest chip generations in multiple topologies, including sixpack, half-bridge and H-bridge.
The SEMITOP E2 half-bridges come in two different pin-outs:
- Pin-out 1 allows for a multiple-sourcing strategy down to the chip level
- Pin-out 2 is highly optimized for easy PCB designs and paralleling several power modules.
The SEMITOP E1/E2 Silicon Carbide features a low specific resistance (specific RDS(on)) temperature coefficient. Combined with one of the lowest thermal resistance values of the module package this leads to unprecedented performance. The RDS(on) temperature coefficient is as low as 0.1mΩ/K.
Thanks to thorough simulations during the design phase, all modules are designed for highest switching speeds, exhibiting high performance and stable operation at the same time. The high value of the ratio of input capacitance to Miller capacitance (ciss/crss) protects against parasitic turn-on.
