Application Manual

In an era of rapidly evolving power electronics, power semiconductors remain at the heart of energy conversion, management, and efficient system design. This expanded edition reflects the latest advances in silicon IGBT, silicon carbide MOSFET and other semiconductor technologies, offering deeper insights into their applications across a growing range of industries. Knowledge about rectifier diodes and thyristors, which still offer a reliable and cost-effective solution for power grid integration, has been summarized and preserved.

Now more comprehensive than ever, this edition goes beyond previous versions with even richer content and practical guidance for engineers, designers, and decision-makers.

With over 500 pages of in-depth knowledge, this manual delivers clear, accessible explanations of semiconductor fundamentals paired with advanced insights into power module packaging technologies, module performance, and reliability testing. It provides detailed background information about datasheet statements, their meaning and how they were created. It highlights how innovations in materials and design translate into better products for more efficient, durable, and application-specific solutions.

A major emphasis is placed on real-world application challenges, including component selection tailored to specific operating environments, driver circuit design, thermal management strategies, and optimized layout practices to reduce parasitic effects. New chapters address modern system requirements, such as advanced protection schemes and integration within complex power architectures.

This third edition is fully updated to meet today’s practice — a definitive resource designed to empower professionals with the expertise needed to navigate the future of power electronic confidently and effectively.