SEMITRANS® Classic
Faster Switching, Higher Power, Proven Package
SEMITRANS® Classic – 25kW up to 500kW
SEMITRANS Classic power modules are robust industry standard packages with copper baseplate and screw terminals for the power connections. The SEMITRANS Classic packages feature a low inductance design, used for inverters from 25kW to 500kW. The IGBT modules are available up to 900A and 1700V, achieved with various IGBT chip sources and CAL diodes. SiC modules are available as full SiC modules with and without hybrid SiC freewheeling diodes and as hybrid SiC modules with IGBT and SiC freewheeling diodes. With more than 25 years of market experience, the SEMITRANS package delivers an established, tested standard design.
SEMITRANS® Classic Benefits
- Robust industry standard package
- Multiple IGBT sources
- Large portfolio
- SiC MOSFET and hybrid SiC modules available
SEMITRANS® Classic Key Features
- IGBT modules available in 600V, 650V, 1200V and 1700V, from 50A to 900A
- SiC modules available in 1200V and 1700V, from 200A to 500A
- Half-bridge, single switch, chopper, multilevel, sixpack and common emitter topologies
- Insulated copper baseplate using DBC (some SiC modules use AlN AMB)
- High isolation voltage
SEMITRANS® Classic Applications
These proven and tested packages are designed for a wide range of applications such as regenerative inverters and power supplies. The long service life is ideally suited to ambitious applications.
SEMITRANS® Classic Product Range
The SEMITRANS Classic IGBT and SiC module family offers a wide range of topologies and power ranges, with all standard voltage classes from 600V to 1700V covered. The current rating ranges from 50A to 900A. The SEMITRANS package is available in half-bridge, chopper, single switch, multilevel and common emitter topologies.
Large Portfolio
- 50A - 900A, five housing sizes, different topologies
- A perfect fit for any application
SEMITRANS® IGBT Modules
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SEMITRANS® SiC MOSFET Modules
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SEMITRANS® Hybrid-SiC Modules
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SEMITRANS® MOSFET Modules
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Extended Portfolio: Faster Switching and Higher Power
More power in 62mm:
SEMITRANS 3 portfolio extension for 1200V and 1700V
- 33% more power in 62mm housing
- Based on proven IGBT chip technology
- Available in half-bridge, chopper and common emitter configurations
- Well established package
New high-speed IGBT4 –
1200V modules
- For welding, solar, resonant inverters and medical applications
- Up to 40% lower power losses in comparison to standard low-power IGBT technology
- More powerful versions available thanks to increased current density of the chips
- SEMIKRON‘s new ultrafast CAL4U diodes are a perfect match for high-speed IGBTs
- Well established packages
Tried and tested SEMITRANS packages
- Now with 33% more power
- Low inductance design
- Reliable mechanical package
- Wide range of IGBT technologies
Faster Switching with SEMITRANS SiC Modules
Hybrid SiC SEMITRANS 3 Modules
(IGBT4 & SiC diode)
- 62mm half-bridge
- 1200V, 200A IGBT4 & 1200V, 80A or 160A SiC Schottky diode
- Low inductance design
- Reliable mechanical package
Full SiC SEMITRANS 3 Modules
(use of SiC MOSFET’s internal body diode)
- 62mm half-bridge
- 1200V/350A & 500A, 1700V/260A SiC MOSFET
- Humidity-robust Rohm Gen 2 SiC MOSFET Chips
- Modules partly equipped with AlN AMB
- Low inductance design
- Reliable mechanical package
Full SiC SEMITRANS 3 Modules
(SiC MOSFET & hybrid SiC diode)
- 62mm half-bridge
- 1200V/350A, 1700V/260A SiC MOSFET
- Humidity-robust Rohm Gen 2 SiC MOSFET and Schottky diode Chips
- Modules equipped with AlN AMB
- Low inductance design
- Reliable mechanical package