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21920680VM04

SKM260MB170SCH17-M04

SEMITRANS 3

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Product specifications

Characteristic
Value
Chip technologyGen 2 SiC MOSFET (RM)
Current (A)378 A
Dimensions (LxWxH)106x62x31
FeaturesExternal SiC Schottky Barrier Diode embeddedFull Silicon Carbide (SiC) power moduleHigh reliability 2<sup>nd</sup> Generation SiC MOSFETsOptimized for fast switching and lowest power lossesInsulated copper baseplate using DBC technology (Direct Bonded Copper)Improved thermal performances with Aluminum Nitride (AlN) substrateUL recognized, file no. E63532
HousingSEMITRANS 3
Product StatusIn Production New
Product lineSEMITRANS
TechnologySiC MOSFET
TopologyHalf-Bridge
TypeSEMITRANS 3
Typical applicationsTraction APUIndustrial Test SystemsEV ChargersHigh frequency power suppliesAC inverters
Voltage (V)1700 V

General specifications

Characteristic
Value
Proposition 65Cancer and Reproductive Harm