21920680VM04
SKM260MB170SCH17-M04
SEMITRANS 3, HALA P8
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | Gen 2 SiC MOSFET (RM) |
| Country of origin | Italy |
| Current (A) | 378 A |
| Dimensions (LxWxH) | 106x62x31 |
| Features | External SiC Schottky Barrier Diode embeddedFull Silicon Carbide (SiC) power moduleHigh reliability 2<sup>nd</sup> Generation SiC MOSFETsOptimized for fast switching and lowest power lossesInsulated copper baseplate using DBC technology (Direct Bonded Copper)Improved thermal performances with Aluminum Nitride (AlN) substrateUL recognized, file no. E63532 |
| Housing | SEMITRANS 3 |
| Product line | SEMITRANS |
| Product Status | Not for New Designs |
| Technology | SiC MOSFET |
| Topology | Half-Bridge |
| Type | SEMITRANS 3 |
| Typical applications | Traction APUIndustrial Test SystemsEV ChargersHigh frequency power suppliesAC inverters |
| Variant | HALA P8 |
| Voltage (V) | 1700 V |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.32 Kilogram |
| Net weight | 0.31 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |