21920190VM05
SKM350MB120SCH15-M05
SEMITRANS 3, HPTP
21920190VM05
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | Gen 2 SiC MOSFET (RM) |
| Country of origin | Italy |
| Current (A) | 478 A |
| Dimensions (LxWxH) | 106x62x31 |
| Features | Full Silicon Carbide (SiC) power moduleHigh reliability 2<sup>nd</sup> Generation SiC MOSFETsOptimized for fast switching and lowest power lossesHigh humidity robustness (HV-H3TRB proof)Insulated copper baseplate using DBC technology (Direct Bonded Copper)Improved thermal performances with Aluminium Nitride (AlN) substrateUL recognized, file no. E63532 |
| Housing | SEMITRANS 3 |
| Product line | SEMITRANS |
| Product Status | In Production New |
| Technology | SiC MOSFET |
| Topology | Half-Bridge |
| Type | SEMITRANS 3 |
| Typical applications | High frequency power suppliesAC invertersTraction APUEV ChargersIndustrial Test Systems |
| Variant | HPTP |
| Variant Description | The SKM350MB120SCH15-M05 is a 1200 V SiC MOSFET module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime. |
| Variant Short Description | Module + High Performance Thermal Paste (HPTP) |
| Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.32 Kilogram |
| Net weight | 0.31 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |