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22891102VM04

SKM200GBD126D-M04

SEMITRANS 3, HALA P8

Product specifications

Characteristic
Value
Current (A)150 A
Voltage (V)1200 V
TopologyHalf-Bridge
HousingSEMITRANS 3
Chip technologyIGBT 3 (Trench)
Country of originSlovakia
Dimensions (LxWxH)106x62x31
FeaturesTrench = Trenchgate technologyV<sub>CE(sat) </sub>with positive temperature coefficientHigh short circuit capability, self limiting to 6 x I<sub>C</sub>UL recognized, file no. E63532
Product lineSEMITRANS
Product StatusIn Production
TechnologyIGBT
Typical applicationsCurrent source inverter
VariantHALA P8

General specifications

Characteristic
Value
Gross weight0.32 Kilogram
Net weight0.31 Kilogram
Proposition 65Cancer and Reproductive Harm

Variant information

Characteristic
Value
Variant DescriptionThe SKM200GBD126D-M04 is a 1200 V IGBT module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Variant Short DescriptionModule + Phase Change Material HALA P8
Variants<a href="/products/p/skm200gbd126d-m04-22891102vm04">SKM200GBD126D-M04</a>