22892220VM04
SKM200GB12T4SiC2-M04
SEMITRANS 3, HALA P8
22892220VM04
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | SiC Diode + IGBT 4 (Trench) |
| Country of origin | Slovakia |
| Current (A) | 200 A |
| Dimensions (LxWxH) | 106x62x31 |
| Features | IGBT4 = 4. Generation Fast Trench IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532Increased power cycling capabilityWith integrated gate resistorFor higher switching frequencies |
| Housing | SEMITRANS 3 |
| Product line | SEMITRANS |
| Product Status | In Production New |
| Technology | Hybrid SiC |
| Topology | Half-Bridge |
| Type | SEMITRANS 3 |
| Typical applications | AC inverter drivesUPSElectronic weldersDC/DC converters |
| Variant | HALA P8 |
| Variant Description | The SKM200GB12T4SiC2-M04 is a 1200 V Hybrid SiC module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| Variant Short Description | Module + Phase Change Material HALA P8 |
| Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.32 Kilogram |
| Net weight | 0.31 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |