22892220VM04
SKM200GB12T4SiC2-M04
SEMITRANS 3
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | SiC Diode + IGBT 4 (Trench) |
| Current (A) | 200 A |
| Dimensions (LxWxH) | 106x62x31 |
| Features | IGBT4 = 4. Generation Fast Trench IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)For higher switching frequenciesIncreased power cycling capabilityWith integrated gate resistorUL recognized, file no. E63532 |
| Housing | SEMITRANS 3 |
| Product Status | In Production New |
| Product line | SEMITRANS |
| Technology | Hybrid SiC |
| Topology | Half-Bridge |
| Type | SEMITRANS 3 |
| Typical applications | AC inverter drivesDC/DC convertersElectronic weldersUPS |
| Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
|---|---|
| Proposition 65 | Cancer and Reproductive Harm |