22890620VM04
SKM200GB125D-M04
SEMITRANS 3, HALA P8
22890620VM04
Product specifications
Characteristic | Value |
|---|---|
| Product Status | In Production |
| Country of origin | Slovakia |
| Current (A) | 150 A |
| Voltage (V) | 1200 V |
| Topology | Half-Bridge |
| Product line | SEMITRANS |
| Housing | SEMITRANS 3 |
| Dimensions (LxWxH) | 106x62x31 |
| Technology | IGBT |
| Chip technology | NPT IGBT (Ultrafast) |
| Features | N channel , homogeneous SiLow inductance caseShort tail current with low temperature dependenceHigh short circuit capability, self limiting to 6 x I<sub>cnom</sub>Fast & soft inverse CAL diodesIsolated copper baseplate using DCB Direct Copper Bonding TechnologyLarge clearance (13 mm) and creepage distance (20 mm) |
| Typical applications | Switched mode power supplies at f<sub>sw </sub>> 20 kHzResonant inverters up to 100 kHzInductive heatingElectronic welders at f<sub>sw </sub>> 20 kHz |
| Variant | HALA P8 |
| Variant Description | The SKM200GB125D-M04 is a 1200 V IGBT module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| Variant Short Description | Module + Phase Change Material HALA P8 |
| Variants | <a href="/products/p/skm200gb125d-m04-22890620vm04">SKM200GB125D-M04</a><a href="/products/p/skm200gb125d-22890620">SKM200GB125D</a> |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.32 Kilogram |
| Net weight | 0.31 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |