22890620VM04
SKM200GB125D-M04
SEMITRANS 3
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | NPT IGBT (Ultrafast) |
| Current (A) | 150 A |
| Dimensions (LxWxH) | 106x62x31 |
| Features | N channel , homogeneous SiIsolated copper baseplate using DCB Direct Copper Bonding TechnologyLarge clearance (13 mm) and creepage distance (20 mm)Short tail current with low temperature dependenceHigh short circuit capability, self limiting to 6 x I<sub>cnom</sub>Low inductance caseFast & soft inverse CAL diodes |
| Housing | SEMITRANS 3 |
| Product Status | In Production |
| Product line | SEMITRANS |
| Technology | IGBT |
| Topology | Half-Bridge |
| Type | SEMITRANS 3 |
| Typical applications | Resonant inverters up to 100 kHzInductive heatingSwitched mode power supplies at f<sub>sw </sub>> 20 kHzElectronic welders at f<sub>sw </sub>> 20 kHz |
| Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
|---|---|
| Proposition 65 | Cancer and Reproductive Harm |