21915390VM06
SKM100GB125DN-M06
SEMITRANS 2N
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | NPT IGBT (Ultrafast) |
| Current (A) | 75 A |
| Dimensions (LxWxH) | 95x35x31 |
| Features | Isolated copper baseplate using DCB Direct Copper Bonding TechnologyLarge clearance (10 mm) and creepage distances (20 mm)Short tail current with low temperature dependenceHigh short circuit capability, self limiting to 6 x I<sub>cnom</sub>N channel, homogeneous SiLow inductance caseFast & soft inverse CAL diodes |
| Housing | SEMITRANS 2N |
| Product Status | In Production |
| Product line | SEMITRANS |
| Technology | IGBT |
| Topology | Half-Bridge |
| Type | SEMITRANS 2N |
| Typical applications | Resonant inverters up to 100 kHzElectronic welders at f<sub>sw</sub> > 20 kHzInductive heatingSwitched mode power supplies at f<sub>sw</sub> > 20 kHz |
| Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
|---|---|
| Proposition 65 | Cancer and Reproductive Harm |