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21915390VM06

SKM100GB125DN-M06

SEMITRANS 2N, HALA HT

Product specifications

Characteristic
Value
Chip technologyNPT IGBT (Ultrafast)
Country of originItaly
Current (A)75 A
Dimensions (LxWxH)95x35x31
FeaturesN channel, homogeneous SiLow inductance caseShort tail current with low temperature dependenceHigh short circuit capability, self limiting to 6 x I<sub>cnom</sub>Fast &amp; soft inverse CAL diodesIsolated copper baseplate using DCB Direct Copper Bonding TechnologyLarge clearance (10 mm) and creepage distances (20 mm)
HousingSEMITRANS 2N
Product lineSEMITRANS
Product StatusIn Production
TechnologyIGBT
TopologyHalf-Bridge
TypeSEMITRANS 2N
Typical applicationsSwitched mode power supplies at f<sub>sw</sub> &gt; 20 kHzResonant inverters up to 100 kHzInductive heatingElectronic welders at f<sub>sw</sub> &gt; 20 kHz
VariantHALA HT
Voltage (V)1200 V

General specifications

Characteristic
Value
Gross weight0.17 Kilogram
Net weight0.16 Kilogram
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