21915390
SKM100GB125DN
SEMITRANS 2N
21915390
Product specifications
Characteristic | Value |
|---|---|
| Product Status | In Production |
| Country of origin | Italy |
| Current (A) | 75 A |
| Voltage (V) | 1200 V |
| Topology | Half-Bridge |
| Product line | SEMITRANS |
| Housing | SEMITRANS 2N |
| Dimensions (LxWxH) | 95x35x31 |
| Technology | IGBT |
| Chip technology | NPT IGBT (Ultrafast) |
| Features | N channel, homogeneous SiLow inductance caseShort tail current with low temperature dependenceHigh short circuit capability, self limiting to 6 x I<sub>cnom</sub>Fast & soft inverse CAL diodesIsolated copper baseplate using DCB Direct Copper Bonding TechnologyLarge clearance (10 mm) and creepage distances (20 mm) |
| Typical applications | Switched mode power supplies at f<sub>sw</sub> > 20 kHzResonant inverters up to 100 kHzInductive heatingElectronic welders at f<sub>sw</sub> > 20 kHz |
| Legacy part number | 21915390 |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.17 Kilogram |
| Net weight | 0.16 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Characteristic | Value |
|---|---|
| Variants | <a href="/products/p/skm100gb125dn-m06-21915390vm06">SKM100GB125DN-M06</a><a href="/products/p/skm100gb125dn-21915390">SKM100GB125DN</a> |