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21915390

SKM100GB125DN

SEMITRANS 2N

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Product specifications

Characteristic
Value
Chip technologyNPT IGBT (Ultrafast)
Current (A)75 A
Dimensions (LxWxH)95x35x31
FeaturesN channel, homogeneous SiLow inductance caseShort tail current with low temperature dependenceHigh short circuit capability, self limiting to 6 x I<sub>cnom</sub>Fast &amp; soft inverse CAL diodesIsolated copper baseplate using DCB Direct Copper Bonding TechnologyLarge clearance (10 mm) and creepage distances (20 mm)
HousingSEMITRANS 2N
Legacy part number21915390
Product StatusIn Production
Product lineSEMITRANS
TechnologyIGBT
TopologyHalf-Bridge
TypeSEMITRANS 2N
Typical applicationsSwitched mode power supplies at f<sub>sw</sub> &gt; 20 kHzResonant inverters up to 100 kHzInductive heatingElectronic welders at f<sub>sw</sub> &gt; 20 kHz
Voltage (V)1200 V

General specifications

Characteristic
Value
Proposition 65Cancer and Reproductive Harm