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24922530VM05

SK80MB120CR03TE1-M05

SEMITOP E1

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Product specifications

Characteristic
Value
Chip technologyGen 3 SiC MOSFET (WS)
Current (A)100 A
Dimensions (LxWxH)63x34x12
FeaturesOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorPress-Fit contact technology1200V Planar Gen3 SiC MOSFETVery low inductance designUL recognized file no. E 63 532Optimized design for superior thermal performanceSimple to drive with +15V gate voltage
HousingSEMITOP E1
Product StatusIn Production New
Product lineSEMITOP
TechnologySiC MOSFET
TopologyHalf-Bridge
TypeSEMITOP E1
Typical applicationsEnergy Storage SystemsSolarUPSSwitched Mode Power SuppliesElectric Vehicle chargingMotor Drives
Voltage (V)1200 V

General specifications

Characteristic
Value
Proposition 65Cancer and Reproductive Harm