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24922530VM05

SK80MB120CR03TE1-M05

SEMITOP E1, HPTP

Product specifications

Characteristic
Value
Chip technologyGen 3 SiC MOSFET (WS)
Country of originItaly
Current (A)100 A
Dimensions (LxWxH)63x34x12
FeaturesOptimized design for superior thermal performanceVery low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
HousingSEMITOP E1
Product lineSEMITOP
Product StatusIn Production New
TechnologySiC MOSFET
TopologyHalf-Bridge
TypeSEMITOP E1
Typical applicationsSwitched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives
VariantHPTP
Voltage (V)1200 V

General specifications

Characteristic
Value
Gross weight0.022 Kilogram
Net weight0.022 Kilogram
Proposition 65Cancer and Reproductive Harm