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24922670VM05

SK40MD120CR03ETE1-M05

SEMITOP E1, HPTP

Product specifications

Characteristic
Value
Chip technologyGen 3 SiC MOSFET (WS)
Country of originItaly
Current (A)51 A
Dimensions (LxWxH)63x34x12
FeaturesOptimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSSimple to drive with +15V gate voltageIntegrated NTC temperature sensorUL recognized file no. E 63 532
HousingSEMITOP E1
Product lineSEMITOP
Product StatusIn Production New
TechnologySiC MOSFET
TopologySixpack
TypeSEMITOP E1
Typical applicationsSwitched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSMotor Drives
VariantHPTP
Voltage (V)1200 V

General specifications

Characteristic
Value
Gross weight0.022 Kilogram
Net weight0.022 Kilogram
Proposition 65Cancer and Reproductive Harm