24923870VM07
SK35DGDL12RAETE2-M07
SEMITOP E2, HP-PCM
24923870VM07
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | RGA |
| Country of origin | Italy |
| Current (A) | 35 A |
| Dimensions (LxWxH) | 63x57x12 |
| Features | Optimized design for superior thermal performanceLow inductive designPress-Fit contact technology1200V RGA IGBT (RA)Robust and soft switching CAL4F diode technologyPEP rectifier diode technology for enhanced power and environmental robustnessIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Housing | SEMITOP E2 |
| Product line | SEMITOP |
| Product Status | Sample Status |
| Technology | IGBT |
| Topology | CIB |
| Type | SEMITOP E2 |
| Typical applications | Motor drivesAir conditioningAuxiliary Inverters |
| Variant | HP-PCM |
| Variant Description | The SK35DGDL12RAETE2-M07 is a 1200 V IGBT module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler. |
| Variant Short Description | Module + High Performance Phase Change Material (HP-PCM) |
| Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.058 Kilogram |
| Net weight | 0.038 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |