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24922590VM07

SK250MB120CR03TE2-M07

SEMITOP E2, HP-PCM

Product specifications

Characteristic
Value
Product StatusIn Production New
Country of originItaly
Current (A)267 A
Voltage (V)1200 V
TopologyHalf-Bridge
Product lineSEMITOP
HousingSEMITOP E2
Dimensions (LxWxH)63x57x12
TechnologySiC MOSFET
Chip technologyGen 3 SiC MOSFET (WS)
FeaturesOptimized design for superior thermal performanceExtremely low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
Typical applicationsSwitched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives

General specifications

Characteristic
Value
Gross weight0.058 Kilogram
Net weight0.038 Kilogram
Proposition 65Cancer and Reproductive Harm

Variant information

Characteristic
Value
VariantHP-PCM
Variant DescriptionThe SK250MB120CR03TE2-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Variant Short DescriptionModule + High Performance Phase Change Material (HP-PCM)
Variants<a href="/products/p/sk250mb120cr03te2-m05-24922590vm05">SK250MB120CR03TE2-M05</a><a href="/products/p/sk250mb120cr03te2-m07-24922590vm07">SK250MB120CR03TE2-M07</a><a href="/products/p/sk250mb120cr03te2-24922590">SK250MB120CR03TE2</a>