24922580VM07
SK200MB120CR03TE2-M07
SEMITOP E2, HP-PCM
24922580VM07
Product specifications
Characteristic | Value |
|---|---|
| Product Status | In Production New |
| Country of origin | Italy |
| Current (A) | 223 A |
| Voltage (V) | 1200 V |
| Topology | Half-Bridge |
| Product line | SEMITOP |
| Housing | SEMITOP E2 |
| Dimensions (LxWxH) | 63x57x12 |
| Technology | SiC MOSFET |
| Chip technology | Gen 3 SiC MOSFET (WS) |
| Features | Optimized design for superior thermal performanceExtremely low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Typical applications | Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.058 Kilogram |
| Net weight | 0.038 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Characteristic | Value |
|---|---|
| Variant | HP-PCM |
| Variant Description | The SK200MB120CR03TE2-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler. |
| Variant Short Description | Module + High Performance Phase Change Material (HP-PCM) |
| Variants | <a href="/products/p/sk200mb120cr03te2-m05-24922580vm05">SK200MB120CR03TE2-M05</a><a href="/products/p/sk200mb120cr03te2-m07-24922580vm07">SK200MB120CR03TE2-M07</a><a href="/products/p/sk200mb120cr03te2-24922580">SK200MB120CR03TE2</a> |