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24923540VM07

SK100MH120RM04ETE2-M07

SEMITOP E2, HP-PCM

Product specifications

Characteristic
Value
Product StatusIn Production New
Country of originItaly
Current (A)99 A
Voltage (V)1200 V
TopologyH-Bridge
Product lineSEMITOP
HousingSEMITOP E2
Dimensions (LxWxH)63x57x12
TechnologySiC MOSFET
Chip technologyGen 4 SiC MOSFET (RM)
FeaturesOptimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
Typical applicationsElectric Vehicle chargingEnergy Storage SystemsSolarUPS

General specifications

Characteristic
Value
Gross weight0.058 Kilogram
Net weight0.038 Kilogram
Proposition 65Cancer and Reproductive Harm

Variant information

Characteristic
Value
VariantHP-PCM
Variant DescriptionThe SK100MH120RM04ETE2-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Variant Short DescriptionModule + High Performance Phase Change Material (HP-PCM)
Variants<a href="/products/p/sk100mh120rm04ete2-m05-24923540vm05">SK100MH120RM04ETE2-M05</a><a href="/products/p/sk100mh120rm04ete2-m07-24923540vm07">SK100MH120RM04ETE2-M07</a><a href="/products/p/sk100mh120rm04ete2-24923540">SK100MH120RM04ETE2</a>