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24923540VM05

SK100MH120RM04ETE2-M05

SEMITOP E2, HPTP

Product specifications

Characteristic
Value
Chip technologyGen 4 SiC MOSFET (RM)
Country of originItaly
Current (A)99 A
Dimensions (LxWxH)63x57x12
FeaturesOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorPress-Fit contact technologyUL recognized file no. E 63 532Low inductance designUnipolar gate controlOptimized design for superior thermal performance1200V Trench Gen4 SiC MOSFET
HousingSEMITOP E2
Product lineSEMITOP
Product StatusIn Production New
TechnologySiC MOSFET
TopologyH-Bridge
TypeSEMITOP E2
Typical applicationsEnergy Storage SystemsSolarUPSElectric Vehicle charging
VariantHPTP
Voltage (V)1200 V

General specifications

Characteristic
Value
Gross weight0.058 Kilogram
Net weight0.038 Kilogram
Proposition 65Cancer and Reproductive Harm