24923530VM05
SK100MH120RM04ETE1-M05
SEMITOP E1, HPTP
24923530VM05
Product specifications
Characteristic | Value |
|---|---|
| Product Status | In Production New |
| Country of origin | Italy |
| Current (A) | 89 A |
| Voltage (V) | 1200 V |
| Topology | H-Bridge |
| Product line | SEMITOP |
| Housing | SEMITOP E1 |
| Dimensions (LxWxH) | 63x34x12 |
| Technology | SiC MOSFET |
| Chip technology | Gen 4 SiC MOSFET (RM) |
| Features | Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Typical applications | Electric Vehicle chargingEnergy Storage SystemsSolarUPS |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.022 Kilogram |
| Net weight | 0.022 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Characteristic | Value |
|---|---|
| Variant | HPTP |
| Variant Description | The SK100MH120RM04ETE1-M05 is a 1200 V SiC MOSFET module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime. |
| Variant Short Description | Module + High Performance Thermal Paste (HPTP) |
| Variants | <a href="/products/p/sk100mh120rm04ete1-m05-24923530vm05">SK100MH120RM04ETE1-M05</a><a href="/products/p/sk100mh120rm04ete1-m07-24923530vm07">SK100MH120RM04ETE1-M07</a> |