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24923530VM05

SK100MH120RM04ETE1-M05

SEMITOP E1

Product specifications

Characteristic
Value
Chip technologyGen 4 SiC MOSFET (RM)
Current (A)89 A
Dimensions (LxWxH)63x34x12
FeaturesOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorPress-Fit contact technologyUL recognized file no. E 63 532Low inductance designUnipolar gate controlOptimized design for superior thermal performance1200V Trench Gen4 SiC MOSFET
HousingSEMITOP E1
Product StatusSample Status
Product lineSEMITOP
TechnologySiC MOSFET
TopologyH-Bridge
TypeSEMITOP E1
Typical applicationsEnergy Storage SystemsSolarUPSElectric Vehicle charging
Voltage (V)1200 V

General specifications

Characteristic
Value
Proposition 65Cancer and Reproductive Harm