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27895300VM07

SEMiX603GB12E4SiCp-M07

SEMiX 3p, HP-PCM

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Product specifications

Characteristic
Value
Product StatusIn Production
Country of originSlovakia
Current (A)600 A
Voltage (V)1200 V
TopologyHalf-Bridge
Product lineSEMiX
HousingSEMiX 3p
Dimensions (LxWxH)150x62x17
TechnologyHybrid SiC
Chip technologySiC Diode + IGBT 4 (Trench)
FeaturesWith Silicon Carbide (SiC) Schottky diodesHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientPress-fit pins as auxiliary contactsThermally optimized ceramicUL recognized, file no. E63532
Typical applicationsAC inverter drivesUPSRenewable energy systems

General specifications

Characteristic
Value
Gross weight0.381 Kilogram
Net weight0.35 Kilogram
Proposition 65Cancer and Reproductive Harm

Variant information

Characteristic
Value
VariantHP-PCM
Variant DescriptionThe SEMiX603GB12E4SiCp-M07 is a 1200 V Hybrid SiC module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Variant Short DescriptionModule + High Performance Phase Change Material (HP-PCM)
Variants<a href="/products/p/semix603gb12e4sicp-m04-27895300vm04">SEMiX603GB12E4SiCp-M04</a><a href="/products/p/semix603gb12e4sicp-m06-27895300vm06">SEMiX603GB12E4SiCp-M06</a><a href="/products/p/semix603gb12e4sicp-m07-27895300vm07">SEMiX603GB12E4SiCp-M07</a><a href="/products/p/semix603gb12e4sicp-27895300">SEMiX603GB12E4SiCp</a>