27895300VM07
SEMiX603GB12E4SiCp-M07
SEMiX 3p, HP-PCM
27895300VM07
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | SiC Diode + IGBT 4 (Trench) |
| Country of origin | Slovakia |
| Current (A) | 600 A |
| Dimensions (LxWxH) | 150x62x17 |
| Features | With Silicon Carbide (SiC) Schottky diodesHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientPress-fit pins as auxiliary contactsThermally optimized ceramicUL recognized, file no. E63532 |
| Housing | SEMiX 3p |
| Product line | SEMiX |
| Product Status | In Production |
| Technology | Hybrid SiC |
| Topology | Half-Bridge |
| Type | SEMiX 3p |
| Typical applications | AC inverter drivesUPSRenewable energy systems |
| Variant | HP-PCM |
| Variant Description | The SEMiX603GB12E4SiCp-M07 is a 1200 V Hybrid SiC module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| Variant Short Description | Module + High Performance Phase Change Material (HP-PCM) |
| Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.381 Kilogram |
| Net weight | 0.35 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |