27895300VM04
SEMiX603GB12E4SiCp-M04
SEMiX 3p, HALA P8
27895300VM04
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | SiC Diode + IGBT 4 (Trench) |
| Country of origin | Slovakia |
| Current (A) | 600 A |
| Dimensions (LxWxH) | 150x62x17 |
| Features | With Silicon Carbide (SiC) Schottky diodesHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientPress-fit pins as auxiliary contactsThermally optimized ceramicUL recognized, file no. E63532 |
| Housing | SEMiX 3p |
| Product line | SEMiX |
| Product Status | In Production |
| Technology | Hybrid SiC |
| Topology | Half-Bridge |
| Type | SEMiX 3p |
| Typical applications | AC inverter drivesUPSRenewable energy systems |
| Variant | HALA P8 |
| Variant Description | The SEMiX603GB12E4SiCp-M04 is a 1200 V Hybrid SiC module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| Variant Short Description | Module + Phase Change Material HALA P8 |
| Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.381 Kilogram |
| Net weight | 0.35 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |