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27897000VM04

SEMiX603GB12E4Ip-M04

SEMiX 3p shunt, HALA P8

Product specifications

Characteristic
Value
Product StatusIn Production
Country of originSlovakia
Current (A)600 A
Voltage (V)1200 V
TopologyHalf-Bridge
Product lineSEMiX
HousingSEMiX 3p shunt
Dimensions (LxWxH)150x62x17
TechnologyIGBT
Chip technologyIGBT 4 (Trench)
FeaturesHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientHigh short circuit capabilityPress-fit pins as auxiliary contactsThermally optimized ceramicCurrent sensing shunt resistorUL recognized, file no. E63532
Typical applicationsAC inverter drivesUPSRenewable energy systems
VariantHALA P8
Variant DescriptionThe SEMiX603GB12E4Ip-M04 is a 1200 V IGBT module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Variant Short DescriptionModule + Phase Change Material HALA P8
Variants<a href="/products/p/semix603gb12e4ip-m04-27897000vm04">SEMiX603GB12E4Ip-M04</a><a href="/products/p/semix603gb12e4ip-m06-27897000vm06">SEMiX603GB12E4Ip-M06</a><a href="/products/p/semix603gb12e4ip-m07-27897000vm07">SEMiX603GB12E4Ip-M07</a>

General specifications

Characteristic
Value
Gross weight0.381 Kilogram
Net weight0.35 Kilogram
Proposition 65Cancer and Reproductive Harm