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27897103VM04

SEMiX523GB12M7I26p-M04

SEMiX 3p shunt, HALA P8

Product specifications

Characteristic
Value
Chip technologyIGBT M7
Country of originSlovakia
Current (A)525 A
Dimensions (LxWxH)150x62x17
FeaturesHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientHigh overload capabilityLow loss high density IGBTsPress-fit pins as auxiliary contactsUL recognized, file no. E63532
HousingSEMiX 3p shunt
Product lineSEMiX
Product StatusIn Production New
TechnologyIGBT
TopologyHalf-Bridge
TypeSEMiX 3p shunt
Typical applicationsAC inverter drivesUPSRenewable energy systems
VariantHALA P8
Variant DescriptionThe SEMiX523GB12M7I26p-M04 is a 1200 V IGBT module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Variant Short DescriptionModule + Phase Change Material HALA P8
Voltage (V)1200 V

General specifications

Characteristic
Value
Gross weight0.381 Kilogram
Net weight0.35 Kilogram
Proposition 65Cancer and Reproductive Harm