27922500VM07
SEMiX205BT07F3SC4-M07
SEMiX 5p
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | SiC Diode + IGBT 3 (Trench) |
| Country of origin | Italy |
| Current (A) | 200 A |
| Dimensions (LxWxH) | 130x70x17 |
| Features | Low inductance caseSilicon Carbide (SiC) Free-wheeling Schottky diodes : Diode 1 (D1…D4)Solderless assembling solution with PressFIT signal pins and screw power terminalsIGBT 3 High Speed Trench TechnologyNTC temperature sensor insideV<sub>CE(sat) </sub>with positive temperature coefficientSilicon anti-parallel diodes , Diode 2 (D5…D8)Reliable mechanical design with injection moulded terminals and reliable internal connectionsUL recognized file no. E63532 |
| Housing | SEMiX 5p |
| Product line | SEMiX |
| Product Status | In Production New |
| Technology | Hybrid SiC |
| Topology | 3-Level |
| Type | SEMiX 5p |
| Typical applications | High Frequency Resonant ConverterInterleaved Active RectifierUPS |
| Voltage (V) | 650 V |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.475 Kilogram |
| Net weight | 0.39 Kilogram |