27922500VM07
SEMiX205BT07F3SC4-M07
SEMiX 5p, HP-PCM
27922500VM07
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | SiC Diode + IGBT 3 (Trench) |
| Country of origin | Italy |
| Current (A) | 200 A |
| Dimensions (LxWxH) | 130x70x17 |
| Features | Solderless assembling solution with PressFIT signal pins and screw power terminalsIGBT 3 High Speed Trench TechnologySilicon Carbide (SiC) Free-wheeling Schottky diodes : Diode 1 (D1…D4)Silicon anti-parallel diodes , Diode 2 (D5…D8)V<sub>CE(sat) </sub>with positive temperature coefficientLow inductance caseReliable mechanical design with injection moulded terminals and reliable internal connectionsUL recognized file no. E63532NTC temperature sensor inside |
| Housing | SEMiX 5p |
| Product line | SEMiX |
| Product Status | In Production New |
| Technology | Hybrid SiC |
| Topology | 3-Level |
| Type | SEMiX 5p |
| Typical applications | High Frequency Resonant ConverterInterleaved Active RectifierUPS |
| Variant | HP-PCM |
| Variant Description | The SEMiX205BT07F3SC4-M07 is a 650 V Hybrid SiC module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler. |
| Variant Short Description | Module + High Performance Phase Change Material (HP-PCM) |
| Voltage (V) | 650 V |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.475 Kilogram |
| Net weight | 0.39 Kilogram |