SKiiP IPM
SKiiP Technology makes power design a system-level building block. The technology combines SiC and IGBT based modules, gate drive, and cooling technology in one, perfectly matched setup to provide the fastest and safest way to integrate power-electronics. Final testing at the end of production, including a one-hour burn-in test, ensures the highest reliability in the application. The SKiiP IPM 1200V/ 1700V (IGBT) and 2000V (SiC) product lines set a benchmark for high-performance and robust inverter designs. All SKiiP generations feature high power densities combined with flexible cooling options, such as air and liquid cooling or customized heat sinks. Reliable driver technology, integrated current sensors, and comprehensive protection functions complete the IPM design.

All SKiiP IPM
SKiiP IPM has been available on the market for over 20 years. Multiple generations of SKiiP have leveraged this expertise in power electronics across a variety of applications. SKiiP 3 gained widespread adoption within the industrial drive sector, while SKiiP 7 serves as its successor, incorporating the latest IGBT/Diode chip technologies and advanced driver components. Featuring six-pack and half-bridge topologies, it supports current ranges from 500A to 2400A.
The SKiiP 4 platform delivers enhanced performance by utilizing IGBT technology and, in its most recent evolution, SiC-based modules optimized for high reliability and demanding power cycling requirements. SKiiP 4 extends coverage up to 3600A with IGBTs, while it addresses 1500VDC, and fast-switching applications with the SKiiP 4 SiC 2000V variant, capable of delivering up to 2400A.
SKiiP IPM by Product Line
The SKiiP technology combines IGBT or SiC modules, gate drive for safe signal insulation, ultra-precise current and voltage sensors, and an efficient heatsink, in one, perfectly matched setup. The SKiiP IGBT IPM 1200V and 1700V product lines set a benchmark for high-performance and robust inverter designs. SKiiP 3 has propagated widely through the industrial drive segment and SKiiP 7 is a new generation based on the actual IGBT/Diode chip generation and driver components. With its six-pack and half-bridge topologies, it covers a current range from 500A up to 2400A. The SKiiP 4, available in a half-bridge topology, has been optimized for the highest power cycling requirements and covers the higher power range up to 3600A.
The SKiiP 4 SiC, available in half-bridge and multi-phase topology, provides convenient and safest possible access to high-performance SiC power-electronics for fast-switching applications with VDC up to 1500V.