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27895300

SEMiX603GB12E4SiCp

SEMiX 3p

产品规格

特性
值
产品状态In Production
原产地Slovakia
电流600 A
电压1200 V
拓扑Half-Bridge
产品线SEMiX
外壳SEMiX 3p
尺寸150x62x17
技术Hybrid SiC
芯片技术SiC Diode + IGBT 4 (Trench)
FeaturesWith Silicon Carbide (SiC) Schottky diodesHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientPress-fit pins as auxiliary contactsThermally optimized ceramicUL recognized, file no. E63532
典型应用AC inverter drivesUPSRenewable energy systems
原料号27895300

一般规格

特性
值
毛重0.381 千克
净重0.35 千克
Proposition 65Cancer and Reproductive Harm

Variant information

特性
值
Variants<a href="/zh-cn/products/p/semix603gb12e4sicp-m04-27895300vm04">SEMiX603GB12E4SiCp-M04</a><a href="/zh-cn/products/p/semix603gb12e4sicp-m06-27895300vm06">SEMiX603GB12E4SiCp-M06</a><a href="/zh-cn/products/p/semix603gb12e4sicp-m07-27895300vm07">SEMiX603GB12E4SiCp-M07</a><a href="/zh-cn/products/p/semix603gb12e4sicp-27895300">SEMiX603GB12E4SiCp</a>