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27895300

SEMiX603GB12E4SiCp

SEMiX 3p

产品规格

特性
产品状态In Production
原产地Slovakia
电流600 A
电压1200 V
拓扑Half-Bridge
产品线SEMiX
外壳SEMiX 3p
尺寸150x62x17
技术Hybrid SiC
芯片技术SiC Diode + IGBT 4 (Trench)
特性With Silicon Carbide (SiC) Schottky diodesHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientPress-fit pins as auxiliary contactsThermally optimized ceramicUL recognized, file no. E63532
典型应用AC inverter drivesUPSRenewable energy systems
原料号27895300

一般规格

特性
毛重0.381 千克
净重0.35 千克
Proposition 65Cancer and Reproductive Harm

Variant information

特性
Variants<a href="/products/p/semix603gb12e4sicp-m04-27895300vm04">SEMiX603GB12E4SiCp-M04</a><a href="/products/p/semix603gb12e4sicp-m06-27895300vm06">SEMiX603GB12E4SiCp-M06</a><a href="/products/p/semix603gb12e4sicp-m07-27895300vm07">SEMiX603GB12E4SiCp-M07</a>