SKiiP®4 SiC 2kV – Addressing the 1500VDC Challenge
Focus on your innovation – powered by SiC, ready as a system-level building block. Whether you are advancing power-to-X and green hydrogen production, optimizing high-efficiency motor drives, designing for 1500VDC grid architectures, or improving power quality and active filtering – you need reliable, high-performance power. We deliver it. Across renewable energy and industrial power conversion applications, SKiiP 4 SiC 2kV is your advantage. The power tool built for the 1500VDC challenge.
SKiiP®4 SiC – IPM with 2kV SiC MOSFETs
The SKiiP 4 SiC 2kV IPM is designed to simplify and accelerate your transition to high-power silicon carbide. It combines the latest generation of high-efficiency 2kV SiC MOSFETs with a perfectly matched gate driver, integrated current and voltage sensing, and high-performance liquid cooling – all within the proven and reliable SKiiP 4 platform.
By addressing key challenges such as fast switching, EMI, voltage overshoot, and short-circuit protection at system level, SKiiP 4 significantly reduces design complexity and risk.
Engineered for applications from 500kW to multi-megawatts, it also provides a future-ready upgrade path to upcoming SiC generations – without requiring system requalification. This gives you immediate access to next-generation performance while strengthening supply chain resilience in a dynamic market.
Maximum Power and Reliability with SKiiP®4 SiC
With a power range of up to 2400A, the SKiiP 4 SiC offers a highly convenient and secure solution for high-power converter designs utilizing SiC technology. The proven high-performance and reliable assembly techniques employed in SKiiP 4 – including silver sintering, baseplate-free construction, and advanced cooling systems – create an optimal environment for maximizing the potential of SiC MOSFET devices.
The integrated gate-driver is specifically engineered to suit the MOSFET technology and topology of the SKiiP, ensuring safe and stable operation across the entire operational spectrum. Furthermore, the driver architecture is designed to support continual advancements in SiC technology, minimizing impact on system design.
SKiiP 4 SiC can be configured in half-bridge and multi-phase topologies, allowing for flexible combinations of power modules mounted on the heat sink. The digital driver interface, inherited from SKiiP 4 IGBT including its CAN-bus capability, enables seamless selection between IGBT or SiC-based SKiiPs without requiring modifications to the overall system architecture.
High Power SiC IPM Ready for 1500VDC
SiC unlocks higher efficiency and faster switching but bringing it into high-power applications can be complex and time-consuming. SKiiP 4 SiC 2kV simplifies that step.
As a fully integrated system-level building block, it combines advanced SiC modules, matched gate drive, and benchmark cooling on a proven platform, so you can reduce complexity, minimize risk, and move from design to industrialization faster.
Designed for 1500VDC architectures, SKiiP 4 SiC empowers your applications in renewable energy, power-to-X, green hydrogen, and industrial drives – delivering reliable, high-performance power where it matters most.
Focus on your innovation. Powered by SiC. Ready to scale.
SKiiP®4 SiC Product Specifications
| Specification | Value / Range |
| Chip Type | SiC |
| Chip Attachment | Sinter |
| Technology | Pressure Contact System |
| Voltage Range (Chip) | 2000V SiC |
| Voltage Range (System) | 1500VDC |
| Cooling | HPC Liquid |
| Current Range (Phase) | 600A – 2400A |
| Sensors | Current, Voltage |
| Protection | Overcurrent, Overvoltage, Short-Circuit |