22892013
SKM75GB12V
SEMITRANS 2
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | V-IGBT |
| Current (A) | 75 A |
| Dimensions (LxWxH) | 94x34x30 |
| Features | V-IGBT = 6. Generation Trench V-IGBT (Fuji)CAL4 = Soft switching 4. Generation CAL-diodeInsulated copper baseplate using DBC technology (Direct Bonded Copper)Increased power cycling capabilityWith integrated gate resistorUL recognized, file no. E63532Lowest switching losses at High di/dt |
| Housing | SEMITRANS 2 |
| Legacy part number | 22892013 |
| Product Status | In Production |
| Product line | SEMITRANS |
| Technology | IGBT |
| Topology | Half-Bridge |
| Type | SEMITRANS 2 |
| Typical applications | AC inverter drivesUPSElectronic welders |
| Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
|---|---|
| Proposition 65 | Cancer and Reproductive Harm |