
22892010VM07
SKM75GB12T4-M07
SEMITRANS 2
Product specifications
Characteristic | Value |
---|---|
Chip technology | IGBT 4 Fast (Trench) |
Current (A) | 75 A |
Dimensions (LxWxH) | 94x34x30 |
Features | Insulated copper baseplate using DBC technology (Direct Bonded Copper)For higher switching frequencies up to 20kHzIGBT4 = 4th generation fast trench IGBT (Infineon)Increased power cycling capabilityCAL4 = Soft switching 4th generation CAL-diodeWith integrated gate resistorUL recognized, file no. E63532 |
Housing | SEMITRANS 2 |
Product Status | In Production |
Product line | SEMITRANS |
Technology | IGBT |
Topology | Half-Bridge |
Type | SEMITRANS 2 |
Typical applications | Electronic welders at fsw up to 20 kHzAC inverter drivesUPS |
Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
---|---|
Proposition 65 | Cancer and Reproductive Harm |