
21920420VM04
SKM350MB120SCH17-M04
SEMITRANS 3
Product specifications
Characteristic | Value |
---|---|
Chip technology | Gen 2 SiC MOSFET (RM) |
Current (A) | 478 A |
Dimensions (LxWxH) | 106x62x31 |
Features | External SiC Schottky Barrier Diode embeddedHigh humidity robustness (HV-H3TRB proof)Full Silicon Carbide (SiC) power moduleImproved thermal performances with Aluminium Nitride (AlN) substrateHigh reliability 2<sup>nd</sup> Generation SiC MOSFETsOptimized for fast switching and lowest power lossesInsulated copper baseplate using DBC technology (Direct Bonded Copper)UL recognized, file no. E63532 |
Housing | SEMITRANS 3 |
Product Status | In Production New |
Product line | SEMITRANS |
Technology | SiC MOSFET |
Topology | Half-Bridge |
Type | SEMITRANS 3 |
Typical applications | Traction APUIndustrial Test SystemsEV ChargersHigh frequency power suppliesAC inverters |
Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
---|---|
Proposition 65 | Cancer and Reproductive Harm |