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22892073VM04

SKM300GB12V-M04

SEMITRANS 3

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Product specifications

Characteristic
Value
Chip technologyV-IGBT
Current (A)300 A
Dimensions (LxWxH)106x62x31
FeaturesInsulated copper baseplate using DBC technology (Direct Bonded Copper)V-IGBT = 6. Generation Trench V-IGBT (Fuji)CAL4 = Soft switching 4. Generation CAL-diodeLowest switching losses at High di/dtIncreased power cycling capabilityWith integrated gate resistorUL recognized, file no. E63532
HousingSEMITRANS 3
Product StatusIn Production
Product lineSEMITRANS
TechnologyIGBT
TopologyHalf-Bridge
TypeSEMITRANS 3
Typical applicationsAC inverter drivesElectronic weldersUPS
Voltage (V)1200 V

General specifications

Characteristic
Value
Proposition 65Cancer and Reproductive Harm