22892220
SKM200GB12T4SiC2
SEMITRANS 3
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | SiC Diode + IGBT 4 (Trench) |
| Current (A) | 200 A |
| Dimensions (LxWxH) | 106x62x31 |
| Features | IGBT4 = 4. Generation Fast Trench IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532Increased power cycling capabilityWith integrated gate resistorFor higher switching frequencies |
| Housing | SEMITRANS 3 |
| Legacy part number | 22892220 |
| Product Status | In Production New |
| Product line | SEMITRANS |
| Technology | Hybrid SiC |
| Topology | Half-Bridge |
| Type | SEMITRANS 3 |
| Typical applications | AC inverter drivesUPSElectronic weldersDC/DC converters |
| Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
|---|---|
| Proposition 65 | Cancer and Reproductive Harm |