22892220
SKM200GB12T4SiC2
SEMITRANS 3
22892220
Product specifications
Characteristic | Value |
|---|---|
| Product Status | In Production New |
| Country of origin | Slovakia |
| Current (A) | 200 A |
| Voltage (V) | 1200 V |
| Topology | Half-Bridge |
| Product line | SEMITRANS |
| Housing | SEMITRANS 3 |
| Dimensions (LxWxH) | 106x62x31 |
| Technology | Hybrid SiC |
| Chip technology | SiC Diode + IGBT 4 (Trench) |
| Features | IGBT4 = 4. Generation Fast Trench IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532Increased power cycling capabilityWith integrated gate resistorFor higher switching frequencies |
| Typical applications | AC inverter drivesUPSElectronic weldersDC/DC converters |
| Legacy part number | 22892220 |
| Variants | <a href="/products/p/skm200gb12t4sic2-m04-22892220vm04">SKM200GB12T4SiC2-M04</a><a href="/products/p/skm200gb12t4sic2-22892220">SKM200GB12T4SiC2</a> |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.32 Kilogram |
| Net weight | 0.31 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |