22892067VM07
SKM200GB12E4-M07
SEMITRANS 3
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | IGBT 4 (Trench) |
| Current (A) | 200 A |
| Dimensions (LxWxH) | 106x62x31 |
| Features | Insulated copper baseplate using DBC technology (Direct Bonded Copper)For higher switching frequencies up to 12kHzIncreased power cycling capabilityCAL4 = Soft switching 4th generation CAL-diodeWith integrated gate resistorIGBT4 = 4th generation medium fast trench IGBT (Infineon)UL recognized, file no. E63532 |
| Housing | SEMITRANS 3 |
| Product Status | In Production |
| Product line | SEMITRANS |
| Technology | IGBT |
| Topology | Half-Bridge |
| Type | SEMITRANS 3 |
| Typical applications | AC inverter drivesUPS |
| Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
|---|---|
| Proposition 65 | Cancer and Reproductive Harm |