
22895560VM06
SKM200GAL12VL2-M06
SEMITRANS 2
Product specifications
Characteristic | Value |
---|---|
Chip technology | V-IGBT |
Current (A) | 200 A |
Dimensions (LxWxH) | 94x34x30 |
Features | Insulated copper baseplate using DBC technology (Direct Bonded Copper)V-IGBT = 6. Generation Trench V-IGBT (Fuji)CAL4 = Soft switching 4. Generation CAL-diodeLowest switching losses at High di/dtIncreased power cycling capabilityWith integrated gate resistorUL recognized, file no. E63532 |
Housing | SEMITRANS 2 |
Product Status | In Production New |
Product line | SEMITRANS |
Technology | IGBT |
Topology | Chopper/Booster |
Type | SEMITRANS 2 |
Typical applications | Switched reluctance motorDC/DC – converterBrake chopperElectronic welders |
Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
---|---|
Proposition 65 | Cancer and Reproductive Harm |