22896120
SKM200GAL12F4SiC3
SEMITRANS 3
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | SiC Diode + IGBT 4 fast (Trench) |
| Current (A) | 200 A |
| Dimensions (LxWxH) | 106x62x31 |
| Features | IGBT4 = 4. Generation Fast Trench (High Speed) IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532With integrated gate resistorFor higher switching frequencies |
| Housing | SEMITRANS 3 |
| Legacy part number | 22896120 |
| Product Status | In Production New |
| Product line | SEMITRANS |
| Technology | Hybrid SiC |
| Topology | Chopper/Booster |
| Type | SEMITRANS 3 |
| Typical applications | AC inverter drivesUPSElectronic weldersDC/DC converters |
| Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
|---|---|
| Proposition 65 | Cancer and Reproductive Harm |