Product specifications
Characteristic | Value |
|---|---|
| Chip Technology | SiC Diode + IGBT 4 fast (Trench) |
| Current (A) | 200 A |
| Dimensions (LLxBBxHH) mm | 106x62x31 |
| Features | IGBT4 = 4. Generation Fast Trench (High Speed) IGBT (Infineon)With Silicon Carbide Schottky diodes (ROHM)Insulated copper baseplate using DBC Technology (Direct Bonded Copper)UL recognized, file no. E63532With integrated gate resistorFor higher switching frequencies |
| Housing | SEMITRANS 3 |
| Part Number | 22896120 |
| Product Line | SEMITRANS |
| Product Status | In production new |
| Product Type | SKM200GAL12F4SiC3 |
| Switches | Chopper/Booster |
| Technology | Hybrid SiC |
| Typical Applications | AC inverter drivesUPSElectronic weldersDC/DC converters |
| Voltage (V) | 1200 V |