24922530VM07
SK80MB120CR03TE1-M07
SEMITOP E1, HP-PCM
24922530VM07
Product specifications
Characteristic | Value |
|---|---|
| Product Status | In Production New |
| Country of origin | Italy |
| Current (A) | 100 A |
| Voltage (V) | 1200 V |
| Topology | Half-Bridge |
| Product line | SEMITOP |
| Housing | SEMITOP E1 |
| Dimensions (LxWxH) | 63x34x12 |
| Technology | SiC MOSFET |
| Chip technology | Gen 3 SiC MOSFET (WS) |
| Features | Optimized design for superior thermal performanceVery low inductance designPress-Fit contact technology1200V Planar Gen3 SiC MOSFETSimple to drive with +15V gate voltageOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Typical applications | Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolarMotor Drives |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.022 Kilogram |
| Net weight | 0.022 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Characteristic | Value |
|---|---|
| Variant | HP-PCM |
| Variant Description | The SK80MB120CR03TE1-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface. |
| Variant Short Description | Module + High Performance Phase Change Material (HP-PCM) |
| Variants | <a href="/products/p/sk80mb120cr03te1-m05-24922530vm05">SK80MB120CR03TE1-M05</a><a href="/products/p/sk80mb120cr03te1-m07-24922530vm07">SK80MB120CR03TE1-M07</a><a href="/products/p/sk80mb120cr03te1-24922530">SK80MB120CR03TE1</a> |