24923170VM05
SK40MLLE120CR03TE1-M05
SEMITOP E1, HPTP
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | Gen 3 SiC MOSFET (WS) |
| Country of origin | Italy |
| Current (A) | 43 A |
| Dimensions (LxWxH) | 63x34x12 |
| Features | 1200V Planar Gen3 SiC MOSSiC Schottky diodeIntegrated NTC temperature sensorPress-Fit contact technologyUL recognized file no. E 63 532Extremely low inductance designOptimized design for superior thermal performanceSimple to drive with +15V gate voltageNew PEP diode technology for enhanced power and environmental robustness |
| Housing | SEMITOP E1 |
| Product line | SEMITOP |
| Product Status | In Production New |
| Technology | SiC MOSFET |
| Topology | Chopper/Booster |
| Type | SEMITOP E1 |
| Typical applications | Solar |
| Variant | HPTP |
| Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.022 Kilogram |
| Net weight | 0.022 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |