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24923170VM05

SK40MLLE120CR03TE1-M05

SEMITOP E1

Product specifications

Characteristic
Value
Chip technologyGen 3 SiC MOSFET (WS)
Current (A)43 A
Dimensions (LxWxH)63x34x12
Features1200V Planar Gen3 SiC MOSSiC Schottky diodeIntegrated NTC temperature sensorPress-Fit contact technologyUL recognized file no. E 63 532Extremely low inductance designOptimized design for superior thermal performanceSimple to drive with +15V gate voltageNew PEP diode technology for enhanced power and environmental robustness
HousingSEMITOP E1
Product StatusIn Production New
Product lineSEMITOP
TechnologySiC MOSFET
TopologyChopper/Booster
TypeSEMITOP E1
Typical applicationsSolar
Voltage (V)1200 V

General specifications

Characteristic
Value
Proposition 65Cancer and Reproductive Harm