230B6988
SK150MB120RM04TE1-M07
SEMITOP E1, HP-PCM
230B6988
Product specifications
Characteristic | Value |
|---|---|
| Product Status | Sample Status |
| Country of origin | Italy |
| Current (A) | 139 A |
| Voltage (V) | 1200 V |
| Topology | Half-Bridge |
| Product line | SEMITOP |
| Housing | SEMITOP E1 |
| Dimensions (LxWxH) | 63x34x12 |
| Technology | SiC MOSFET |
| Chip technology | Gen 4 SiC MOSFET (RM) |
| Features | Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| Typical applications | Switched Mode Power SuppliesEnergy Storage SystemsElectric Vehicle chargingUPSSolar |
General specifications
Characteristic | Value |
|---|---|
| Gross weight | 0.022 Kilogram |
| Net weight | 0.022 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Characteristic | Value |
|---|---|
| Variant | HP-PCM |
| Variant Description | The SK150MB120RM04TE1-M07 is a 1200 V SiC MOSFET module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a phase change material and offers superior thermal performance, which maximizes the module's power output or significantly increases its lifetime. The material is solid at room temperature and starts to flow only after very first operation, spread out and fill the gaps between module and cooler. |
| Variant Short Description | Module + High Performance Phase Change Material (HP-PCM) |
| Variants | <a href="/products/p/sk150mb120rm04te1-m07-230b6988">SK150MB120RM04TE1-M07</a><a href="/products/p/sk150mb120rm04te1-m05-230b9702">SK150MB120RM04TE1-M05</a><a href="/products/p/sk150mb120rm04te1-24923550">SK150MB120RM04TE1</a> |