27895300VM06
SEMiX603GB12E4SiCp-M06
SEMiX 3p
Product specifications
Characteristic | Value |
|---|---|
| Chip technology | SiC Diode + IGBT 4 (Trench) |
| Current (A) | 600 A |
| Dimensions (LxWxH) | 150x62x17 |
| Features | Trench = Trenchgate technologyThermally optimized ceramicHomogeneous SiV<sub>CE(sat)</sub> with positive temperature coefficientWith Silicon Carbide (SiC) Schottky diodesPress-fit pins as auxiliary contactsUL recognized, file no. E63532 |
| Housing | SEMiX 3p |
| Product Status | In Production |
| Product line | SEMiX |
| Technology | Hybrid SiC |
| Topology | Half-Bridge |
| Type | SEMiX 3p |
| Typical applications | AC inverter drivesRenewable energy systemsUPS |
| Voltage (V) | 1200 V |
General specifications
Characteristic | Value |
|---|---|
| Proposition 65 | Cancer and Reproductive Harm |