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27895300

SEMiX603GB12E4SiCp

SEMiX 3p

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Product specifications

Characteristic
Value
Chip technologySiC Diode + IGBT 4 (Trench)
Current (A)600 A
Dimensions (LxWxH)150x62x17
FeaturesWith Silicon Carbide (SiC) Schottky diodesHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientPress-fit pins as auxiliary contactsThermally optimized ceramicUL recognized, file no. E63532
HousingSEMiX 3p
Legacy part number27895300
Product StatusIn Production
Product lineSEMiX
TechnologyHybrid SiC
TopologyHalf-Bridge
TypeSEMiX 3p
Typical applicationsAC inverter drivesUPSRenewable energy systems
Voltage (V)1200 V

General specifications

Characteristic
Value
Proposition 65Cancer and Reproductive Harm