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27897010VM07

SEMiX603GB12E4I25p-M07

SEMiX 3p shunt, HP-PCM

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Product specifications

Characteristic
Value
Current (A)600 A
Voltage (V)1200 V
TopologyHalf-Bridge
HousingSEMiX 3p shunt
Chip technologyIGBT 4 (Trench)
Country of originSlovakia
Dimensions (LxWxH)150x62x17
FeaturesHomogeneous SiTrench = Trenchgate technologyV<sub>CE(sat)</sub> with positive temperature coefficientHigh short circuit capabilityPress-fit pins as auxiliary contactsThermally optimized ceramicCurrent sensing shunt resistorUL recognized, file no. E63532
Product lineSEMiX
Product StatusIn Production New
TechnologyIGBT
Typical applicationsAC inverter drivesUPSRenewable energy systems
VariantHP-PCM

General specifications

Characteristic
Value
Gross weight0.381 Kilogram
Net weight0.35 Kilogram
Proposition 65Cancer and Reproductive Harm

Variant information

Characteristic
Value
Variant DescriptionThe SEMiX603GB12E4I25p-M07 is a 1200 V IGBT module and comes with pre-applied High Performance Phase Change Material (HP-PCM, λ=8.5 W/mK). HP-PCM is a silicone-free phase change material (PCM) having a solid consistency at room temperature. With the application of heat during first operation, the PCM flows to fill gaps and provide a thermal interface.
Variant Short DescriptionModule + High Performance Phase Change Material (HP-PCM)
Variants<a href="/products/p/semix603gb12e4i25p-m04-27897010vm04">SEMiX603GB12E4I25p-M04</a><a href="/products/p/semix603gb12e4i25p-m06-27897010vm06">SEMiX603GB12E4I25p-M06</a><a href="/products/p/semix603gb12e4i25p-m07-27897010vm07">SEMiX603GB12E4I25p-M07</a>