24923530VM05
SK100MH120RM04ETE1-M05
SEMITOP E1, HPTP
24923530VM05
製品仕様
特徴 | 値 |
|---|---|
| 製品の状態 | In Production New |
| 原産国 | Italy |
| 電流 (A) | 89 A |
| 電圧 (V) | 1200 V |
| トポロジー | H-Bridge |
| 製品ライン | SEMITOP |
| ハウジング | SEMITOP E1 |
| 寸法 | 63x34x12 |
| 技術 | SiC MOSFET |
| チップ技術 | Gen 4 SiC MOSFET (RM) |
| 特徴 | Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532 |
| 代表的なアプリケーション | Electric Vehicle chargingEnergy Storage SystemsSolarUPS |
| Variants | <a href="/products/p/sk100mh120rm04ete1-m05-24923530vm05">SK100MH120RM04ETE1-M05</a><a href="/products/p/sk100mh120rm04ete1-m07-24923530vm07">SK100MH120RM04ETE1-M07</a> |
| バリアント | HPTP |
| 分類の簡単な説明 | Module + High Performance Thermal Paste (HPTP) |
| 分類の説明 | The SK100MH120RM04ETE1-M05 is a 1200 V SiC MOSFET module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime. |
一般仕様
特徴 | 値 |
|---|---|
| 総重量 | 0.022 Kilogram |
| 正味重量 | 0.022 Kilogram |
| Proposition 65 | Cancer and Reproductive Harm |