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24923530VM05

SK100MH120RM04ETE1-M05

SEMITOP E1, HPTP

製品仕様

特徴
製品の状態In Production New
原産国Italy
電流 (A)89 A
電圧 (V)1200 V
トポロジーH-Bridge
製品ラインSEMITOP
ハウジングSEMITOP E1
寸法63x34x12
技術SiC MOSFET
チップ技術Gen 4 SiC MOSFET (RM)
特徴Optimized design for superior thermal performanceLow inductance designPress-Fit contact technology1200V Trench Gen4 SiC MOSFETUnipolar gate controlOptimized switching stability thanks to module integrated gate resistorsIntegrated NTC temperature sensorUL recognized file no. E 63 532
代表的なアプリケーションElectric Vehicle chargingEnergy Storage SystemsSolarUPS

一般仕様

特徴
総重量0.022 Kilogram
正味重量0.022 Kilogram
Proposition 65Cancer and Reproductive Harm

Variant information

特徴
Variants<a href="/products/p/sk100mh120rm04ete1-m05-24923530vm05">SK100MH120RM04ETE1-M05</a><a href="/products/p/sk100mh120rm04ete1-m07-24923530vm07">SK100MH120RM04ETE1-M07</a>
バリアントHPTP
分類の簡単な説明Module + High Performance Thermal Paste (HPTP)
分類の説明The SK100MH120RM04ETE1-M05 is a 1200 V SiC MOSFET module and comes with High Performance Thermal Paste (HPTP, λ=2.5 W/mK). HPTP is a silicone-based thermal paste that offers outstanding thermal performance and maximizes the module's output power or significantly increases the module lifetime.