22891102VM04
SKM200GBD126D-M04
SEMITRANS 3, HALA P8
22891102VM04
Produktdaten
Eigenschaften | Wert |
|---|---|
| Produktstatus | In Production |
| Herkunftsland | Slovakia |
| Stromstärke (A) | 150 A |
| Spannung | 1200 V |
| Topologie | Half-Bridge |
| Produktlinie | SEMITRANS |
| Gehäuse | SEMITRANS 3 |
| Abmessungen (LxBxH) | 106x62x31 |
| Technologie | IGBT |
| Chip Technologie | IGBT 3 (Trench) |
| Eigenschaften | Trench = Trenchgate technologyV<sub>CE(sat) </sub>with positive temperature coefficientHigh short circuit capability, self limiting to 6 x I<sub>C</sub>UL recognized, file no. E63532 |
| Typische Anwendungsgebiete | Current source inverter |
Allgemeine Spezifikationen
Eigenschaften | Wert |
|---|---|
| Bruttogewicht | 0.32 Kilogramm |
| Nettogewicht | 0.31 Kilogramm |
| Proposition 65 | Cancer and Reproductive Harm |
Variant information
Eigenschaften | Wert |
|---|---|
| Variante | HALA P8 |
| Varianten Beschreibung | The SKM200GBD126D-M04 is a 1200 V IGBT module and comes with pre-applied phase change material HALA P8 (λ=3.4 W/mK). HALA P8 is a silicone-free phase change material (PCM) having a solid consistency at room temperature. During very first operation, the PCM starts to flow, spread out and fill the gaps between module and cooler. |
| Varianten Kurzbeschreibung | Module + Phase Change Material HALA P8 |
| Variants | <a href="/products/p/skm200gbd126d-m04-22891102vm04">SKM200GBD126D-M04</a><a href="/products/p/skm200gbd126d-22891102">SKM200GBD126D</a> |